1N4736A

1.0W ZENER DIODE

Features PlanarDieConstruction 1.0WattPowerDissipation 3.3–100VNomimalZenerVoltage 5StandardVzTolerance LowInductance TypicalIRLessThan5.0µAAbove11V PlasticCaseMaterialHasULFlammabilityClassificationRating94V-O

1N4736A

1W ZENER DIODE

1N4736A

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE3.3to100VoltsPOWER1.0Watts FEATURES •Lowprofilepackage •Built-instrainrelief •Lowinductance •Hightemperaturesoldering:260°C/10secondsatterminals •PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-O •Pbfreeproductareavailabl

1N4736A

SILICON GLASS PASSIVATED 1.0 WATT ZENER DIODES

FEATURES TheseZenersarebestsuitedforGeneralPurposeIndustrial,Entertainment,Military&SpaceApplications.TheGlassPassivatedChipsareHermeticallySealedwithDoubleStuds,ProvidingExcellentStabilityandReliability.

1N4736A

1W Zener Diodes

Features •1WPowerDissipation •Built-inStrainRelief •LowInductance •HighStability •ZenerVoltagefrom3.3Vto100V •Hightemperaturesolderingguaranteed:260°C/10seconds/.037(9.5mm)leadlength, •RoHSCompliant

1N4736A

SILICON PLANAR POWER ZENER DIODES

foruseinstabilizingandclippingcircuitswithhighpowerrating.

1N4736A

SILICON PLANAR ZENER DIODES

FEATURES ·VoltageRange:3.3Vto100V ·Doublesiugtypeconstruction

1N4736A

SILICON ZENER DIODES

VZ:3.3-300Volts PD:1Watt FEATURES: *Completevoltagerange3.3to300Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree MECHANICALDATA *Case:DO-41Moldedplastic *Epoxy:UL94V-Orateflameretarda

1N4736A

ZENER DIODES

ZenerVoltage:3.3-100VPeakPulsePower:1.0W FEATURE ♦Lowzenerimpedance ♦Lowregulationfactor ♦Glasspassivatedjunction ♦Hightemperaturesolderingguaranteed: 260°C/10S/9.5mmleadlengthat5lbstension

1N4736A

LEADED (THRU-HOLE) Zener Diodes

LEADED(THRU-HOLE) ZenerDiodes