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1N4606

SILICON EPITAXIAL PLANAR TYPE DIODE

TENTATIVE COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.

文件:37.7 Kbytes 页数:1 Pages

TOSHIBA

东芝

1N4606

silicon diode

SILICON DIODE

文件:266.41 Kbytes 页数:6 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

1N4606

200mA,70V Through-Hole Diode-Switching Single

Central

1N4725

SSI
DO-41

1N4733

ST
DO-41

ST

技术参数

  • Case:

    \>DO-35

  • Configuration/ Description:

    Single

  • VRRM MAX:

    70V

  • Io MAX:

    200mA

  • IFSM MAX:

    4A

  • IR MAX:

    100nA

  • @VR:

    50V

  • VF MAX:

    660mV

  • @IF:

    1mA

  • trr MAX:

    6ns

  • CJ MAX:

    2.5pF

供应商型号品牌批号封装库存备注价格
RENESASTECHNOLOGYHONGKON
24+
47627
询价
HITACHI
16+
NA
8800
原装现货,货真价优
询价
HITACHI
07+
6440
优势货源原装正品
询价
HITACHI
24+
8000
原装现货,特价销售
询价
MSC
23+
DO-35
5000
原装正品,假一罚十
询价
NJS
24+
2183
进口原装正品优势供应
询价
UPI
672
全新原装 货期两周
询价
NJS
24+
SMD
18700
询价
NJS
NA
6688
8
现货库存
询价
NJS
20+
DO-4
465
全新现货热卖中欢迎查询
询价
更多1N4606供应商 更新时间2025-10-8 16:30:00