Small-Signal Diode Fast Switching Diode

Features ◆ Silicon Epitaxial Planar Diode ◆ Fast switching diode ◆ This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data ◆ Case: DO-34, DO-35 Glass Case ◆ Weight: approx. 0.13g

文件：170.45 Kbytes 页数：3 Pages

Good-Ark

固锝电子

500mW 75 Volt Silicon Epitaxial Diode

Features ● Planar Passivated ● Metallurgically bonded Construction ● Moisture Sensitivity Level 1

文件：77.18 Kbytes 页数：3 Pages

MCC

SILICON EPITAXIAL PLANAR DIODE

Silicon Expitxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also avaible in glass case DO-34

文件：88.06 Kbytes 页数：1 Pages

SEMTECH

先之科

SMALL SIGNAL SWITCHING DIODE

REVERSE VOLTAGE: 50 V CURRENT: 0.15 A FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation

文件：83.83 Kbytes 页数：3 Pages

BILIN

银河微电

SMALL SIGNAL SWITCHING DIODE

FEATURES • Silicon epitaxial planar diode • Fast swithching diodes • 500mW power dissipation • The diode is also available in the Mini-MELF case with the type designation LL4151

文件：170.76 Kbytes 页数：3 Pages

CHENYI

商朗电子

HIGH SPEED SWITCHING DIODES

VOLTAGE：50-100V CURRENT：0.15 to 0.2 A FEATURES • Silicon epitaxial planar diodes • Low power loss, high efficiency • Low lekage • Low forward voltagh • High speed switching • High current capability • High reliability MECHANICAL DATA • Case:Glass sealed case • Lead: MIL-STD- 202E, Metho

文件：38.43 Kbytes 页数：1 Pages

CHONGQING

平伟实业

TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * Silicon epitaxial planar diodes * Low leakage * Low forward voltage * High speed switching * High current capability * High reliability * Low power loss, high efficiency

文件：180.37 Kbytes 页数：2 Pages

DCCOM

道全

ULTRA HIGH SPEED SILICON PLANAR EPITAXIAL DIODES

ULTRA HIGH SPEED SILICON PLANAR EPITAXIAL DIODES • C ... 4pF @ VR = 0, f = 1.0 MHz • trr ... 2.0 ns @ IF = 10 mA, VR = -6.0 V, RL = 100 Ω

文件：90.28 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Devices

SWITCHING DIODES

文件：44.73 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Devices

SWITCHING DIODES

文件：44.73 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司