1N4151

HIGH SPEED SWITCHING DIODE

FEATURES: •Highswitchingspeed:max.4ns •Reversevoltage:max.50V •Peakreversevoltage:max.75V •Pb/RoHSFree MECHANICALDATA: Case:DO-35GlassCase Weight:approx.0.13g

1N4151

SMALL SIGNAL SWITCHING DIODE

REVERSEVOLTAGE:50VCURRENT:0.15A FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation

1N4151

SILICON EPITAXIAL PLANAR DIODES

SILICONEPITAXIALPLANARDIODES forgeneralpurposeandswitching

1N4151

HIGH SPEED SWITCHING DIODES

VOLTAGE：50-100VCURRENT：0.15to0.2A FEATURES •Siliconepitaxialplanardiodes •Lowpowerloss,highefficiency •Lowlekage •Lowforwardvoltagh •Highspeedswitching •Highcurrentcapability •Highreliability MECHANICALDATA •Case:Glasssealedcase •Lead:MIL-STD-202E,Metho

1N4151

Silicon Planar Diodes

UltrafastRecoveryRectifierDiodes Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing, High-speedswitching Commercialgrade1) MechanicalDa

1N4151

ULTRA HIGH SPEED SILICON PLANAR EPITAXIAL DIODES

ULTRAHIGHSPEEDSILICONPLANAREPITAXIALDIODES •C...4pF@VR=0,f=1.0MHz •trr...2.0ns@IF=10mA,VR=-6.0V,RL=100Ω

1N4151

SILICON EPITAXIAL PLANAR DIODE

SiliconExpitxialPlanarDiode forgeneralpurposeandswitching. Thetypes1N4149,1N4447and1N4449arealsoavaible inglasscaseDO-34

1N4151

TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

VOLTAGERANGE-50to100VoltsCURRENT-0.075to0.2Ampere FEATURES *Siliconepitaxialplanardiodes *Lowleakage *Lowforwardvoltage *Highspeedswitching *Highcurrentcapability *Highreliability *Lowpowerloss,highefficiency

1N4151

500 mW EPITAXIAL PLANAR DIODES

Features ■PLANARPROCESS ■500mWPOWERDISSIPATION ■INDUSTRYSTANDARDDO-35PACKAGE ■MEETSULSPECIFICATION94V-0

1N4151

Small Signal Switching Diodes

REVERSEVOLTAGE:50VCURRENT:0.15A Features ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation