1N4111

SILICON 500mW

MAXIMUMRATINGS JunctionandStorageTemperatures:-65°Cto+200°C DCPowerDissipation:500mW PowerDerating:4.0mW/°Cabove50°CinDO-35 ForwardVoltage@200mA:1.1Volts1N4099-1N4135 @100mA:1.0Volts1N4614-1N4627

1N4111

Consolidated shipping options

DESCRIPTION: TheCENTRALSEMICONDUCTOR1N4099seriessiliconZenerdiodeisdesignedforlowleakage,lowcurrent,andlownoiseapplications. MAXIMUMRATINGS:(TA=25°C)SYMBOLUNITS PowerDissipationPD250mW

1N4111

0.5W, 250μA IZT , Bare Die Zener Diode

Features: SharpReverseCharacteristics LowReverseCurrentLevels HighReliabilityGoldBackMetal HighReliabilitytestedgrades.

1N4111

500mW LOW NOISE SILION ZENER DIODES

VOLTAGERANGE1.8to100Volts FEATURES *Zenervoltage1.8to100V *Lownoise *Lowreverseleakage

1N4111

500mW Low Noise Zener Diodes

Features •LowCurrentOperationat250µA •LowReverseLeakage •LowNoiseCharacteristics •MetallurgicallyBonded •Hightemperaturesolderingguaranteed:260˚C/10seconds •RoHSCompliant

1N4111

SILICON PLANAR LOW NOISE ZENER DIODES

FEATURES •Lownoise •Lowreverseleakage

1N4111

400 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES

400MILLIWATTHERMETICALLYSEALEDGLASSSILICONZENERDIODES

1N4111

500mW Silicon Zener Diodes

Features •ZenerVoltageRange=1.8Vto47V •DoubleSlugTypeConstruction •MetallurgicalBondedConstruction •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivity:Level1

1N4111

LOW CURRENT OPERATION AT 250 uA

•1N4099-1THRU1N4135-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/435 •LOWCURRENTOPERATIONAT250µA •LOWREVERSELEAKAGEANDLOWNOISECHARACTERISTICS •METALLURGICALLYBONDED

1N4111

LOW LEVEL ZENER DIODES LOW CURRENT: 250關A - LOW NOISE

1.PackageStyleDO-7 2.Vztolerance:±5 3.ForwardVoltage(VF)Maximum1.0Vdc (1N4614–1N4627IF=100mA;1N4099–1N4121IF=200mA) 4.NoiseDensitymeasuredfrom1000to3000Hz. 5.MILITARYSCREENINGAVAILABLE