1N

型号：BAP70-04W；Package：SOT323；Silicon PIN diode

Generaldescription TwoplanarPINdiodesinseriesconfigurationinanSOT323smallSMDplasticpackage. Featuresandbenefits •High-voltagecurrentcontrolRFresistorforRFattenuators •Lowdiodecapacitance •Lowseriesinductance •AEC-Q101qualified Applications •RFattenuato

ETC

1N

型号：BC847T；Package：SOT-416；45 V, 100 mA NPN general-purpose transistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

PHI

1N

型号：BC847T；Package：SOT-416；NPN general purpose transistors

DESCRIPTION NPNtransistorinanSC-75plasticpackage. PNPcomplements:BC856TandBC857T. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification,especially inportablecommunicationequipment •Electronicdataproce

PHI

1N

型号：BZX58550-C3V3；Package：SC-79；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

1N

型号：BZX58550-C3V3-Q；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

1N

型号：D5V0S1US2LP-7B；Package：U-DFN1006-2；1 CHANNEL UNIDIRECTIONAL TVS

Features LowProfilePackage(0.50mmTypical)andUltra-SmallPCB FootprintArea(1.3mm×0.55mmMax)SuitableforCompact PortableElectronics ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ProvidesSurgeandLightningProtectionperIEC61000-4-5 Standa

1N

型号：DAN222WM；Package：SOT-416；Switching Diode

Features Highreliability Smallmoldtype HighSpeedswitching Application Highspeedswitching

1N

型号：KST14；Package：SOT-23；Darlington Amplifier Transistor

DarlingtonAmplifierTransistor

1N

型号：MM3Z5V1；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

1N

型号：MMBT3904M-C；Package：SOT-723；NPN Plastic Encapsulated Transistor

FEATURES ●SmallPackage