丝印：1N2；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：1N2；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：1N2；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 页数：16 Pages

TOSHIBA

东芝

丝印：1N2；Package：SOT-23；TLV906xS-Q1 Automotive 10-MHz, RRIO, CMOS Operational Amplifiers

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 3A – Device CDM ESD classification level C6 • Rail-to-rail input and output • Low input offset voltage: ±0.3 mV • Unity-gain bandwidth: 10 MHz • Low

文件：3.34212 Mbytes 页数：51 Pages

TI

德州仪器

丝印：1N2；Package：VSSOP；Level-Shifting I2C Bus Repeater

文件：346.02 Kbytes 页数：22 Pages

TI

德州仪器

丝印：1N25；Package：SOT-363；N-Channel Enhancement Mode Power MOSFET

General Features Vds =25VI5=1.1A Rds(on)

文件：258.13 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：1N25E；Package：SOT-223；N-Channel Enhancement Mode MOSFET

文件：691.12 Kbytes 页数：4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：1N25E；Package：SOT-223；N-Channel Enhancement Mode MOSFET

文件：601.58 Kbytes 页数：4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：1N20；Package：SOT-26；N-Ch Enhancement Mode Power MOSFET

文件：624.11 Kbytes 页数：4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

silicon diode

SILICON DIODE

文件：266.41 Kbytes 页数：6 Pages

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