MMBT3904T

Marking：1N；Package：SOT-523；Plastic-Encapsulate Transistors

FEATURES ComplementarytoMMBT3906T SmallPackage

MMBT3904T

Marking：1N；Package：SOT-523；NPN Transistors

■Features ●SmallPackage ●ComplementarytoMMBT3906T

MMBT3904T

Marking：1N；Package：SOT-523；NPN SWITCHING TRANSISTOR

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBT3906T). ●CollectorCurrentCapabilityIc=200mA. ●Collector-emitterVoltageVCEO=40V. APPLICATIONS ●Generalswitchingandamplification.

MMBTA14

Marking：1N；Package：SOT-23；DarlingtonAmplifier Transistors

DarlingtonAmplifierTransistors ​​​​​​​ ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements.

PMBTA14

Marking：1N；Package：SOT23；NPN Darlington transistors

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.30V) •HighDCcurrentgain(min.10000). APPLICATIONS •Highinputimpedancepreamplifiers. DESCRIPTION NPNDarlingtontransistorinaSOT23plasticpackage.PNPcomplement:PMBTA64.

PMEG4002EJ

Marking：1N；Package：SOD323F；200 mA low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD323F(SC-90)smalland flatleadSurface-MountedDevice(SMD)plasticpackage. 1.2Features nAverageforwardcurre

PXTA14

Marking：1N；Package：SOT89；NPN Darlington transistor

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.30V). APPLICATIONS •Highinputimpedancepreamplifiers. DESCRIPTION NPNDarlingtontransistorinaSOT89plasticpackage.PNPcomplement:PXTA64.

BC847T

Marking：1N；Package：SOT-416；45 V, 100 mA NPN general-purpose transistors

DAN222WMFH

Marking：1N；Package：SOT-416；Switching Diode

KST14

Marking：1N；Package：SOT-23；Darlington Amplifier Transistor