EiceDRIVER™ 200 V high-side TDI gate driver IC optimized for CoolGaN™ SG HEMTs and Silicon MOSFETs

\n优势:\n• High side driving and low side ground bounce immunity\n• Optimized switching speed without external gate resistors\n• No induced turn-on\n• Additional induced turn-on immunity\n• No overcharging the bootstrap capacitor during dead-time;

Infineon

英飞凌

200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

文件：12.41516 Mbytes 页数：38 Pages

INFINEON

英飞凌

Package：10-VFDFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：INT. POWERSTAGE/DRIVER PG-VSON-1

INFINEON

英飞凌

200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

Features • Optimized for driving GaN SG HEMTs and Si MOSFETs • Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation • High common-mode input voltage range (CMR) up to ± 200 V for high side operation • High immunity to common-mode voltage transi

文件：1.59964 Mbytes 页数：34 Pages

INFINEON

英飞凌