丝印：1D60A；Package：SOT-89-2L；4 Quadrants Triacs

General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control , lighting control and static switching relay also designed for use in MPU interface, TTLlogic. Features ◆ Repetitive Peak Off-Sta

文件：266.29 Kbytes 页数：6 Pages

ADV

爱德微

丝印：1D60；Package：TO-92；4 Quadrants Triacs

General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control , lighting control and static switching relay also designed for use in MPU interface, TTLlogic. Features ◆ Repetitive Peak Off-Sta

文件：258.519 Kbytes 页数：6 Pages

ADV

爱德微

丝印：1D6N06CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 60 V, 1.36 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：364.23 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D64C；Package：TCPAK57；MOSFET - Power, Single N-Channel 40 V, 1.65 m, 314 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 5x7 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：194.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D64C；Package：TCPAK57；MOSFET - Power, Single N-Channel 40 V, 1.65 m, 319 A

Features  Small Footprint (5x7 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  TCPAK57 5x7 Top Cool Package  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：197.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D6N10MC；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：324.56 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D6N04CL；Package：LFPAK4；MOSFET - Power, Single N-Channel 40 V, 1.6 m, 185 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • LFPAK4 Package, Industry Standard • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：235.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D6N10MC；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

文件：331.37 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D6N10M；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 267 A

文件：262.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D6K；Package：VSSOP；Current Limited, Power-Distribution Switches

文件：1.54843 Mbytes 页数：26 Pages

TI

德州仪器