首页 >18T10>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

18T10

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件:163.65 Kbytes 页数:3 Pages

UTC

友顺

18T10

9A, 100V N-CHANNEL ENHANCEMENT MODE   POWER MOSFET

The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters, etc. • RDS(ON)<0.16Ω @ VGS=10V \n• High switching speed \n• Low gate charge;

UTC

友顺

18T10AGJ-HF

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling

文件:1.88855 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

18T10GJ

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling

文件:1.035619 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

18T10G-TN3-R

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件:163.65 Kbytes 页数:3 Pages

UTC

友顺

18T10G-TN3-T

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件:163.65 Kbytes 页数:3 Pages

UTC

友顺

18T10L-TN3-R

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件:163.65 Kbytes 页数:3 Pages

UTC

友顺

18T10L-TN3-T

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters,

文件:163.65 Kbytes 页数:3 Pages

UTC

友顺

技术参数

  • Vdss(V):

    100

  • Vgss(V):

    ±20

  • Id(A):

    9 / 5.6

  • Package:

    TO-252

供应商型号品牌批号封装库存备注价格
INMET
2023+
TNC
25
weinschel 衰减器库存大量现货,欢迎电寻
询价
-
23+
NA
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
更多18T10供应商 更新时间2025-12-15 10:02:00