| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
18T10 | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters, 文件:163.65 Kbytes 页数:3 Pages | UTC 友顺 | UTC | |
18T10 | 9A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters, etc. • RDS(ON)<0.16Ω @ VGS=10V \n• High switching speed \n• Low gate charge; | UTC 友顺 | UTC | |
N-Channel 100-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling 文件:1.88855 Mbytes 页数:9 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
N-Channel 100-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling 文件:1.035619 Mbytes 页数:9 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters, 文件:163.65 Kbytes 页数:3 Pages | UTC 友顺 | UTC | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters, 文件:163.65 Kbytes 页数:3 Pages | UTC 友顺 | UTC | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters, 文件:163.65 Kbytes 页数:3 Pages | UTC 友顺 | UTC | ||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION The UTC 18T10 is an N-channel enhancement mode Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. The UTC 18T10 is suitable for low voltage applications such as DC/DC converters, 文件:163.65 Kbytes 页数:3 Pages | UTC 友顺 | UTC |
技术参数
- Vdss(V):
100
- Vgss(V):
±20
- Id(A):
9 / 5.6
- Package:
TO-252
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INMET |
2023+ |
TNC |
25 |
weinschel 衰减器库存大量现货,欢迎电寻 |
询价 | ||
- |
23+ |
NA |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 |
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