FDPF18N50T

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.265Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

FIR18N50AFG

500VN-ChannelMOSFET

FIR18N50FG

AdvancedN-ChPowerMOSFET-Y

FQA18N50V

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

G18N50T

N-ChannelEnhancementModePowerMOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lSwitchModePowerSupply(SMPS) l

HFH18N50S

500VN-ChannelMOSFET

HFP18N50U

SuperiorAvalancheRuggedTechnology

HFS18N50U

SuperiorAvalancheRuggedTechnology

HY18N50W

500V/18AN-ChannelEnhancementModeMOSFET

IRFB18N50K

PowerMOSFET

1.LowGateChargeQgResultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdV/dtRuggedness 3.FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent 4.LowRDS(on) 5.Lead(Pb)-freeAvailable