首页 >16N65M5其他被动元件>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinD짼PAK,DPAK | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.230Ohm,12AMDmeshVPowerMOSFETinDPAK,DPAK Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinD짼PAK,DPAK | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.230Ohm,12AMDmeshVPowerMOSFETinDPAK,DPAK Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor •FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.270ohm,12APowerFLAT8x8HV | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel650V,0.230Ohm,12AMDmeshVPowerMOSFETinDPAK,DPAK Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-251 |
8677 |
原装正品现货 可开增值税发票 |
询价 | ||
ST/意法 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
22+ |
TO-251 |
63 |
原装现货假一赔十 |
询价 | ||
ST/意法 |
22+ |
TO-251 |
354000 |
询价 | |||
ST/意法 |
23+ |
TO-251 |
20000 |
原装正品 欢迎咨询 |
询价 | ||
PINGWEI(平伟) |
2112+ |
TO-220MF |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
PINGWEI平伟 |
23+ |
TO-220MF |
22820 |
原装正品，支持实单 |
询价 | ||
PINGWEI(平伟) |
23+ |
TO220MF |
6000 |
诚信服务，绝对原装原盘 |
询价 | ||
23+ |
N/A |
56000 |
一级代理放心采购 |
询价 | |||
UTC |
23/22+ |
TO220F1 |
6000 |
20年老代理.原厂技术支持 |
询价 |
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