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STB16N65M5

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB16N65M5

N-channel650V,0.230Ohm,12AMDmeshVPowerMOSFETinDPAK,DPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB16N65M5

N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinD짼PAK,DPAK

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD16N65M5

N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinD짼PAK,DPAK

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD16N65M5

N-channel650V,0.230Ohm,12AMDmeshVPowerMOSFETinDPAK,DPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD16N65M5

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF16N65M5

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF16N65M5

N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STI16N65M5

iscN-ChannelMosfetTransistor

•FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI16N65M5

N-channel650V,0.230廓,12AMDmesh??VPowerMOSFETinTO-220FP,I짼PAK,TO-220,IPAK,TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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