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STB16N65M5中文资料意法半导体数据手册PDF规格书
STB16N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
■ Worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100 avalanche tested
Applications
■ Switching applications
产品属性
- 型号:
STB16N65M5
- 功能描述:
MOSFET N-Ch MDMesh V 650V 0.270 Ohm 12A D2PAK
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3675 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST/意法 |
24+ |
TO263 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST |
1822+ |
SOT-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST |
23+ |
TO-263 |
8795 |
询价 | |||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
ST |
25+ |
D2PAK |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ST |
06+ |
TO-263 |
8000 |
原装 |
询价 | ||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 |