丝印：1605；Package：DFN2510-10L；Low Capacitance ESD Protection

Features  IEC61000-4-2(ESD)：±20kV Air, ±15kV Contact  IEC61000-4-4(EFT)：40A(5/50ns)  IEC61000-4-5(Lightning)：4A(8/20μS)  Low leakage current, maximum of 50nA at rated voltage  Low capacitance  Low clamping voltage  Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU dir

文件：331.49 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：1605；Package：DFN2510-10L；Low Capacitance ESD Protection

Features  IEC61000-4-2(ESD)：±20kV Air, ±15kV Contact  IEC61000-4-4(EFT)：40A(5/50ns)  IEC61000-4-5(Lightning)：4A(8/20μS)  Low leakage current, maximum of 50nA at rated voltage  Low capacitance  Low clamping voltage  Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU dir

文件：331.49 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：1605；Package：DFN3810-9L；Ultra Low Capacitance ESD Protection

Features  IEC61000-4-2(ESD) ：±20kV Air, ±15kV Contact  IEC61000-4-4(EFT)：40A(5/50ns)  IEC61000-4-5(Lightning)：4A(8/20μS)  Low leakage current, maximum of 50nA at rated voltage  Ultra low capacitance  Low clamping voltage  Lead free in compliance with EU RoHS 2011/65/EU directive 

文件：427.04 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：1606；Package：DFN1006-3；N-Channel Trench MOSFET

General Features VDS = 20V,ID = 0.7A RDS(ON)

文件：405.06 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：1605；Package：DFN1006-3；P-Channel Trench MOSFET

General Features VDS = -20V,ID = -0.7A RDS(ON)

文件：408.77 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：160A；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor

Features ● For surface mounted applications ● Low-profile package ● Ideal for automated placement ● Available in Unidirectional and Bidirectional ● 200 W peak pulse power capability with a 10/1000 μs waveform ● Low incremental surge resistance, excellent clamping capability ● Very fast re

文件：1.26738 Mbytes 页数：4 Pages

SAMYANG

三阳电子

丝印：1604；Package：WSON(DSG)；TPS51604 Synchronous Buck FET Driver for High-Frequency CPU Core Power

1 Features 1• Reduced Dead-Time Drive Circuit for Optimized CCM • Automatic Zero Crossing Detection for Optimized DCM Efficiency • Multiple Low-Power Modes for Optimized Light- Load Efficiency • Optimized Signal Path Delays for High-Frequency Operation • Integrated BST Switch Drive Streng

文件：2.37226 Mbytes 页数：29 Pages

TI

德州仪器

丝印：1604；Package：WSON(DSG)；TPS51604 Synchronous Buck FET Driver for High-Frequency CPU Core Power

1 Features 1• Reduced Dead-Time Drive Circuit for Optimized CCM • Automatic Zero Crossing Detection for Optimized DCM Efficiency • Multiple Low-Power Modes for Optimized Light- Load Efficiency • Optimized Signal Path Delays for High-Frequency Operation • Integrated BST Switch Drive Streng

文件：2.37226 Mbytes 页数：29 Pages

TI

德州仪器

丝印：1604；Package：WSON(DSG)；TPS51604 Synchronous Buck FET Driver for High-Frequency CPU Core Power

1 Features 1• Reduced Dead-Time Drive Circuit for Optimized CCM • Automatic Zero Crossing Detection for Optimized DCM Efficiency • Multiple Low-Power Modes for Optimized Light- Load Efficiency • Optimized Signal Path Delays for High-Frequency Operation • Integrated BST Switch Drive Streng

文件：2.37226 Mbytes 页数：29 Pages

TI

德州仪器

丝印：1604；Package：WSON(DSG)；TPS51604 Synchronous Buck FET Driver for High-Frequency CPU Core Power

1 Features 1• Reduced Dead-Time Drive Circuit for Optimized CCM • Automatic Zero Crossing Detection for Optimized DCM Efficiency • Multiple Low-Power Modes for Optimized Light- Load Efficiency • Optimized Signal Path Delays for High-Frequency Operation • Integrated BST Switch Drive Streng

文件：2.37226 Mbytes 页数：29 Pages

TI

德州仪器