SMZ1160A

Marking：16Z；Package：SOD-123FL；1.0W SURFACE MOUNT ZENER DIODE

LowProfile1.33mmMax.CaseHeight 1.0WPowerDissipation 3.3V–330VNominalZenerVoltage 5StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticMaterial–ULRecognitionFlammability Classification94V-0

SS16FA

Marking：16L；Package：SOD-123FL；Schottky Barrier Rectifiers, Surface Mount, 1 A, 50 V - 150 V

Features •LowPowerLoss,HighEfficiency •GuardRingforOvervoltageProtection •HighSurgeCurrentCapability •ULFlammability94V−0Classification •MSL1perJ−STD−020 •GreenMoldingCompound •TheseDevicesarePb−FreeandareRoHSCompliant

ST16N10-TP

Marking：16N10；Package：TO-252-3L；N-Channel 100-V (D-S) MOSFET

Features ®Ros10m0@VGS=10vV ®SuperhighdensitycelldesignforextremelylowRos)| ®Exceptionalon-resistanceandmaximumDCcurrent

STB16N90K5

Marking：16N90K5；Package：D2PAK；N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a D²PAK package

Features •Industry’slowestRDS(on)xarea •Industry’sbestFoM(figureofmerit) •Ultra-lowgatecharge •100avalanchetested •Zener-protected Applications •Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmeshK5 technology

STL160N4F7

Marking：160N4F7；Package：PowerFLAT；N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced trench

STL165N10F8AG

Marking：165N10F8；Automotive N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features •AEC-Q101qualified •MSL1grade •175°Cmaximumoperatingjunctiontemperature •100%avalanchetested •LowgatechargeQg •Wettableflankpackage Applications •Automotivemotorcontrol •Electromobility Description TheSTL165N10F8AGisa100VN-channelenhancem

STP160N4LF6

Marking：160N4LF6；Package：TO-220；N-channel 40 V, 0.0021 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package

Features •RDS(on)*Qgindustrybenchmark •Extremelylowon-resistanceRDS(on) •Logicleveldrive •Highavalancheruggedness •100avalanchetested Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthe6thgenerationofSTr

STP16N65M2

Marking：16N65M2；Package：TO-220；N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh™M2technology. Thankstotheirstriplayoutandimprovedvertical structure,thedevicesexhibitlowon-resistance andoptimizedswitchingcharacteristics,rendering themsuitableforthemostdemandinghigh effic

STU16N65M2

Marking：16N65M2；Package：IPAK；N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh™M2technology. Thankstotheirstriplayoutandimprovedvertical structure,thedevicesexhibitlowon-resistance andoptimizedswitchingcharacteristics,rendering themsuitableforthemostdemandinghigh effic

SZ1160A

Marking：16Z；1.0W SURFACE MOUNT ZENER DIODE

GlassPassivatedDieConstruction 1.0WPowerDissipation 3.3V–330VNominalZenerVoltage 5StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticCaseMaterialhasULFlammability ClassificationRating94V-0