丝印：152；WE-TIS Shielded Radial Leaded Wire Wound Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：714.35 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：152；WE-TIS Shielded Radial Leaded Wire Wound Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：714.43 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：152；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：863.16 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：152；WE-PD Performance SMT Shielded Power Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +110 °C Operating Temperature -40 °C up to +150 °C Storage Conditions (in original packaging)

文件：671.4 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：152；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：746.58 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：152；RoHS Compliant Halogen Free REACH Compliant

文件：1.3526 Mbytes 页数：10 Pages

LEIDITECH

雷卯电子

丝印：152；RoHS Compliant Halogen Free REACH Compliant

文件：1.3526 Mbytes 页数：10 Pages

LEIDITECH

雷卯电子

丝印：1525；Package：SOT-89；Low voltage high performance NPN power transistor

Description The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features ■ Very low collector-emitter saturation voltage

文件：106.27 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

丝印：1524AMLF；Package：SIOC-24；Dual Output Phase Controlled SSTL_3/PECL Clock Generator

Features • Wide input frequency range • 8 kHz to 100 MHz • 250 MHz balanced PECL differential outputs • 150 MHz single-ended SSTL_3 clock outputs • Dynamic Phase Adjust (DPA) for DPACLK outputs • Software controlled phase adjustment • 360o Adjustment down to 1/64 clock increments • Externa

文件：786 Kbytes 页数：25 Pages

RENESAS

瑞萨

丝印：1524AMLF；Package：SIOC-24；Dual Output Phase Controlled SSTL_3/PECL Clock Generator

Features • Wide input frequency range • 8 kHz to 100 MHz • 250 MHz balanced PECL differential outputs • 150 MHz single-ended SSTL_3 clock outputs • Dynamic Phase Adjust (DPA) for DPACLK outputs • Software controlled phase adjustment • 360o Adjustment down to 1/64 clock increments • Externa

文件：786 Kbytes 页数：25 Pages

RENESAS

瑞萨