High voltage fast-switching NPN Power transistor

Description The device is manufactured using Diffused Collector in Planar technology adopting new and enhanced high voltage structure 1 (E.H.V.S.1). General features ■ State-of-the-art technology: – Diffused collector “Enhanced generation” EHVS1 ■ More stable performances versus operating

文件：189.52 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：1510FX；Package：ISOWATT218FX；High voltage fast-switching NPN Power transistor

Description The device is manufactured using Diffused Collector in Planar technology adopting new and enhanced high voltage structure 1 (E.H.V.S.1). General features ■ State-of-the-art technology: – Diffused collector “Enhanced generation” EHVS1 ■ More stable performances versus operating

文件：189.52 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN Power transistor

ST

意法半导体

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：117.06 Kbytes 页数：2 Pages

VMI

200 V - 1,000 V Single Phase Bridge

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：229.8 Kbytes 页数：2 Pages

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200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：233.3 Kbytes 页数：2 Pages

VMI