高压快速切换NPN功率晶体管

The device is manufactured using new Diffused Collector in Planar technology adopting new and enhanced high voltage structure 1 (E.H.V.S.1). • In compliance with the 2002/93/EC European directive \n• State-of-the-art technology:\t Diffused collector “Enhanced generation” EHVS1\t \n• Low base-drive requirements \n• More stable performances versus operating temperature variation \n• Fully insulated power package U.L. compliant \n• Tighter ;

ST

意法半导体

丝印：1510FX；Package：ISOWATT218FX；High voltage fast-switching NPN Power transistor

Description The device is manufactured using Diffused Collector in Planar technology adopting new and enhanced high voltage structure 1 (E.H.V.S.1). General features ■ State-of-the-art technology: – Diffused collector “Enhanced generation” EHVS1 ■ More stable performances versus operating

文件：189.52 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Package：ISOWATT218FX；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 750V 12A ISOWATT-218FX

STMICROELECTRONICS

意法半导体

NorthenLite G.lite DMT Transceiver

■ ATM transport ■ Forward Error correction & interleaving ■ Framing & de-framing ■ DMT modulation and demodulation ■ Start-up & showtime control processing In addition, the STLC1510 provides the following features: ■ Serial and Parallel network interface at backend to CO equipment ■ Serial

文件：426.51 Kbytes 页数：40 Pages

STMICROELECTRONICS

意法半导体

SUPER FAST GLASS PASSIVATED RECTIFIERS

REVERSE VOLTAGE - 50 to200 Volts FORWARD CURRENT -15 Amperes FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability Low reverse leakage current High surge capacity Plastic package has UL flammabilit

文件：37.48 Kbytes 页数：2 Pages

LITEON

光宝科技

Ultra Fast Recovery Diodes

FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity

文件：75.64 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子