丝印：150N33TC；Package：TO-263；Trench Gate High Speed

Features •International standard packages •Low VCE(sat) - for minimum on-state conduction losses •Fast switching Applications • PDP Screen Drivers

文件：199.58 Kbytes 页数：5 Pages

IXYS

艾赛斯

丝印：150N33TC；Package：TO-3P；Trench Gate High Speed

Features •International standard packages •Low VCE(sat) - for minimum on-state conduction losses •Fast switching Applications • PDP Screen Drivers

文件：199.58 Kbytes 页数：5 Pages

IXYS

艾赛斯

丝印：150N33TCD1；Package：TO-3P；Trench Gate High Speed

Features •International standard packages •Low VCE(sat) - for minimum on-state conduction losses •Fast switching Applications • PDP Screen Drivers

文件：199.58 Kbytes 页数：5 Pages

IXYS

艾赛斯

丝印：150N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

Description The RM150N30ALD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

文件：650.33 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：150N30；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description The RM150N30LT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

文件：304.77 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：150N3LH6；Package：D2PAK；N-channel 30 V, 2.4 m??typ., 80 A, STripFET??VI DeepGATE?? Power MOSFET in D짼PAK package

文件：1.00361 Mbytes 页数：15 Pages

STMICROELECTRONICS

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