Silicon Controlled Rectifier

Silicon Controlled Rectifier ● High dv/dt-200 V/usec. ● 3000 Amperes surge current capability ● Low forward on-state voltage ● Primarily for line commutated converters ● Economical for general purpose phase control applications

文件：169.37 Kbytes 页数：3 Pages

Microsemi

美高森美

Silicon Control ed Rectifier

Silicon Controlled Rectifier ● High dv/dt-200 V/usec. ● 3000 Amperes surge current capability ● Low forward on-state voltage ● Primarily for line commutated converters ● Economical for general purpose phase control applications

文件：141.69 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印：150C；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：150C；Package：DO-214AB；6.8 To 600V 1500W Surface Mount Transient Voltage Suppressors (TVS)

Features A For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability 1500W Peak power capability at 10 × 1000μs waveform Repetition rate (duty cycle):0.01 Fast response t

文件：3.69055 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：150C；Package：DO-214AB；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：150C；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES  For surface mounted applications in order to optimize board space  Typical maximum temperature coefficient △VBR=0.1xVBR@25°C x△T  Low profile package  Built-in strain relief  Glass passivated junction  Excellent clamping capability  Repetition Rate (duty cycle):0.01  Fast

文件：707.52 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：150C；Package：DO-214AB；Transient Voltage Suppressors (TVS) Data Sheet

Features ■For surface mounted applications in order to optimize board space ■Low profile package ■Built in strain relief ■Glass p assivated j unction ■Low inductance ■Excellent clamping capability ■150 0W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0

文件：1.4662 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：150C；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：150C；Package：DO-214AC；Transient Voltage Suppressors (TVS) Data Sheet

Features ■ For surface mounted applications in order to optimize board space ■ Low profile package ■ Glass passivated junction ■ Low inductance ■ Excellent clamping capability ■ 400W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle): 0.01% ■ Fast response t

文件：1.5674 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：150C；Package：DO-214AC；6.8 To 600V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 10V 400W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：3.79742 Mbytes 页数：7 Pages

UNSEMI

优恩半导体