14A, 500V N-CHANNEL POWER MOSFET

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14A , 500V N-CHANNEL POWER MOSFET

The UTC 14N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 14N • RDS(ON) =0.38 Ω @VGS = 10V \n• Ultra low gate charge (typical 43nC ) \n• Low reverse transfer Capacitance ( CRSS = typical 20pF ) \n• Fast switching capability \n• Avalanche energy tested \n• Improved dv/dt capability, high ruggedness;

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N-CHANNEL POWER MOSFET

文件：211.16 Kbytes 页数：7 Pages

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14A, 500V N-CHANNEL POWER MOSFET

文件：198.86 Kbytes 页数：6 Pages

UTC

友顺

14A, 500V N-CHANNEL POWER MOSFET

文件：198.86 Kbytes 页数：6 Pages

UTC

友顺

14A, 500V N-CHANNEL POWER MOSFET

文件：198.86 Kbytes 页数：6 Pages

UTC

友顺

14A, 500V N-CHANNEL POWER MOSFET

文件：198.86 Kbytes 页数：6 Pages

UTC

友顺

14A, 500V  N-CHANNEL  POWER MOSFET

The UTC 14N50K-MT  is a N-channel power MOSFET usingUTC’s advanced technology to provide the customers with minimum on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. RDS(ON) < 0.4Ω @ VGS=10V, ID=7.0AHigh Switching Speed;

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14A, 500V N-CHANNEL POWER MOSFET

The UTC 14N50-TC is a high voltage and high currentpower MOSFET, designed to have better characteristics, suchas fast switching time, low gate charge, low on-stateresistance and a high rugged avalanche characteristics. Thispower MOSFET is usually used at high speed switchingapplications in power sup RDS(ON) < 0.5 Ω @ VGS =10V, ID = 7.0A Fast switching Improved dv/dt capability;

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