High breakdown voltage 10KV/15KV

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DBLECTRO

10G Hi-BW 1330nm CWDM DFB LD (WL -3.5/+2.5nm)

The 127D-10G-LCG11-S is a directly modulated 10Gbps CWDM DFB laser diode chip with operating temperature range from –5°C to 85°C. This part utilizes a patented Etched Facet Technology that enables high performance and product uniformity, and is available as tested die. ·CWDM wavelength\n·Direct modulation up to 10Gbps\n·Uncooled operation\n·Edge emitting laser (EEL)\n·RoHS compliant and Design for Telcordia GR-468;

MACOM

10G Hi-BW 1330nm CWDM DFB LD (WL -3.5/+2.5nm)

The 133D-10G-LCT11 is a directly modulated 10Gbps CWDM DFB laser diode chip with operating temperature range from –5°C to 85°C. This part utilizes a patented Etched Facet Technology that enables high performance and product uniformity, and is available as tested die. ·CWDM wavelength\n·Direct modulation up to 10Gbps\n·Uncooled operation\n·Edge emitting laser (EEL)\n·RoHS compliant and Design for Telcordia GR-468\n;

MACOM

Die, laser, 10G DFB, 1330 -3.5nm / +2.5nm, chip on tape

The 133D-10G-LCT11-S is a directly modulated 10Gbps CWDM DFB laser diode chip with operating temperature range from –5°C to 85°C. This part utilizes a patented Etched Facet Technology that enables high performance and product uniformity, and is available as tested die. ·1330nm wavelength, -3.5nm/+2.5nm\n·Direct modulation up to 10Gbps\n·Uncooled operation\n·Edge emitting laser (EEL)\n·RoHS compliant\n·Design for Telcordia GR-468\n;

MACOM