High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

文件：204.45 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Charger and Switch-mode power supplies

文件：119.63 Kbytes 页数：3 Pages

JINGDAO

晶导

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 and Switch-mode power supplies

文件：127.05 Kbytes 页数：3 Pages

JINGDAO

晶导

Bipolar Junction Transistor

FEATURES ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast， etc

文件：126.78 Kbytes 页数：3 Pages

JINGDAO

晶导

C6Amodul 180° jack

Product specification • modular Cat.6A termination unit RJ45 • mounting version: module, 180° cable feed • solid, one-piece and reusable module housing refined with zinc die-casting • mounting without special tools, strain relief directly snapped on to stuffer cap • migration to 25G-systems w

文件：787.97 Kbytes 页数：12 Pages

METZ

C6Amodul 270° jack

Product specification • modular Cat.6A termination unit RJ45 • mounting version: module, 270° cable feed • solid, one-piece and reusable module housing refined with zinc die-casting • mounting without special tools; strain relief directly snapped on to stuffer cap • easy to install connection

文件：1.3291 Mbytes 页数：10 Pages

METZ

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

文件：78.52 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 页数：3 Pages

UTC

友顺

NPN SILICON POWER TRANSISTORS

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inducti

文件：155.86 Kbytes 页数：3 Pages

UTC

友顺