NPN Silicon Epitaxial Planar Transistor

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SEMTECH_ELEC

先之科半导体

丝印：13003HZ-G1；Package：TO92；465V NPN HIGH VOLTAGE POWER TRANSISTOR

Features • BVCEO > 465V • BVCES > 800V • BVEBO > 9V • IC = 1.5A High Continuous Collector Current • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e. parts qualified to AE

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DIODES

美台半导体

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

文件：49.87 Kbytes 页数：7 Pages

PHI

PHI

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

文件：49.87 Kbytes 页数：7 Pages

PHI

PHI

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

文件：236.1 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体