丝印：127Z；Package：16Ld3x3QFN；Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi

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丝印：127Z；Package：16LD3x3QFN；Ultra High Frequency Transistor Arrays

Features • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP transistor (fT) . . . . . . . . . . . . . . . .

文件：790.14 Kbytes 页数：16 Pages

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丝印：127Z；Package：16LD3x3QFN；Ultra High Frequency Transistor Arrays

Features • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP transistor (fT) . . . . . . . . . . . . . . . .

文件：790.14 Kbytes 页数：16 Pages

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丝印：127ZG；Package：SOT23；N-Channel Enhancement Mode Power MOSFET

Description The RM003N600ES2 is an enhancement N-channel mode Power FET, it uses advanced tec hnology to provide customers ultra high switching speed and ultra low gate charge. General Features * RDS(ON)

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RECTRON

丽正国际

Ultra High Frequency Transistor Arrays

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Intersil