型号：IPF129N20NM6；Package：PG-TO263-7；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61

文件：1.07416 Mbytes 页数：11 Pages

英飞凌

型号：IPT129N20NM6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61

文件：1.01394 Mbytes 页数：11 Pages

英飞凌