丝印：129N20N6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61

文件：1.01394 Mbytes 页数：11 Pages

INFINEON

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OptiMOS ™ 6 功率 MOSFET 200 V 正常电平，采用 TO-Leadless 封装

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Infineon

英飞凌

MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61

文件：1.07416 Mbytes 页数：11 Pages

INFINEON

英飞凌

HSOF-8

INFINEON

英飞凌

上传：深圳市中广亿科技发展有限公司

SOT-23-6

FM/富满

上传：深圳广友电子有限公司