1214GN-650V中文资料RF/Microwave GaN on SiC Power Devices, Pallets and Modules数据手册Microchip规格书

描述 Description

The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150?s pulse width, 10% duty cycle across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.