650 Watts - 50 Volts, 150 s, 10 Broad Band 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150μs pulse width, 10 duty cycle across the 1200 to 1400 MHz band. The transistor has internal pre-match

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MICROSEMI

美高森美

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150?s pulse width, 10% duty cycle across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performan

Microchip

微芯科技

APTIV

安波福

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SMD

MURATA

村田

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SMD

YAGEO

国巨

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