1214GN-120E中文资料RF/Microwave GaN on SiC Power Devices, Pallets and Modules数据手册Microchip规格书

描述 Description

The 1214GN-120E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power under 300 ?S pulse width and 10% long term duty cycle pulsing across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is available in two package types, as well as mounted on a compact footprint 50? IN/OUT pallet, and is specifically designed for L-band pulsed primary radar applications. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness.Export Classification: EAR-99.  PB Free

简介

1214GN-120E属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的1214GN-120E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。