120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: • 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing • Common source, Class AB, 50 V bias voltage • High efficiency: >60 typical across the frequency band • Extrem

文件：488.63 Kbytes 页数：16 Pages

MICROSEMI

美高森美

120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: • 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing • Common source, Class AB, 50 V bias voltage • High efficiency: >60 typical across the frequency band • Extrem

文件：488.63 Kbytes 页数：16 Pages

MICROSEMI

美高森美

120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: • 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing • Common source, Class AB, 50 V bias voltage • High efficiency: >60 typical across the frequency band • Extrem

文件：488.63 Kbytes 页数：16 Pages

MICROSEMI

美高森美

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

The 1214GN-120E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power under 300 ?S pulse width and 10% long term duty cycle pulsing across the 1200 to 1400 MHz band. The transistor h

Microchip

微芯科技

Package：55-QQ；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRAN, GAN, 1200-1400 MHZ, 120W,

MICROCHIP

微芯科技

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

The 1214GN-120E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power under 300 ?S pulse width and 10% long term duty cycle pulsing across the 1200 to 1400 MHz band. The transistor h

Microchip

微芯科技

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

The 1214GN-120E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power under 300 ?S pulse width and 10% long term duty cycle pulsing across the 1200 to 1400 MHz band. The transistor h

Microchip

微芯科技