1214GN-180LV中文资料RF/Microwave GaN on SiC Power Devices, Pallets and Modules数据手册Microchip规格书

描述 Description

The 1214GN-180LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.6dB gain, 180 Watts of pulsed RF output power at 3ms pulse width, 30% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for L-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.  ROHS, PB Free

简介

1214GN-180LV属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的1214GN-180LV晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。