11.4A, 400V N-CHANNEL POWER MOSFET

The 11N40K-MT uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications. • RDS(ON) < 0.52Ω @VGS = 10 V\n• Avalanche Energy Specified\n• ;

UTC

友顺

400V N-Channel MOSFET-T

文件：2.39982 Mbytes 页数：8 Pages

FOSTER

福斯特半导体

400V N-Channel MOSFET

文件：703.95 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=11.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.48Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：363.33 Kbytes 页数：2 Pages

ISC

无锡固电