丝印：110010；Package：DFN1010D-3；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5160QA. 2. Features and benefits • Very low collector-

文件：744.15 Kbytes 页数：17 Pages

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丝印：110001；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.79537 Mbytes 页数：22 Pages

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丝印：110011；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

General description 100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 100 mA output current capability ■ Reduced pick and place costs

文件：2.76058 Mbytes 页数：22 Pages

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丝印：110011；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.75961 Mbytes 页数：22 Pages

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丝印：11000000；Package：DFN1608D-2；20 V, 1.5 A low VF MEGA Schottky barrier rectifier

文件：1.26039 Mbytes 页数：15 Pages

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丝印：1100A1；Package：SOIC；TMCS1100 1 High-Precision, Basic Isolation Hall-Effect Current Sensor With 짹600-V Working Voltage

文件：1.96756 Mbytes 页数：50 Pages

TI

德州仪器

丝印：1100A1；Package：SOIC；TMCS1100 1 High-Precision, Basic Isolation Hall-Effect Current Sensor With 짹600-V Working Voltage

文件：1.96756 Mbytes 页数：50 Pages

TI

德州仪器

丝印：1100A2；Package：SOIC；TMCS1100 1 High-Precision, Basic Isolation Hall-Effect Current Sensor With 짹600-V Working Voltage

文件：1.96756 Mbytes 页数：50 Pages

TI

德州仪器

丝印：1100A2；Package：SOIC；TMCS1100 1 High-Precision, Basic Isolation Hall-Effect Current Sensor With 짹600-V Working Voltage

文件：1.96756 Mbytes 页数：50 Pages

TI

德州仪器

丝印：1100A3；Package：SOIC；TMCS1100 1 High-Precision, Basic Isolation Hall-Effect Current Sensor With 짹600-V Working Voltage

文件：1.96756 Mbytes 页数：50 Pages

TI

德州仪器