丝印：11；Package：SOT23；PNP resistor-equipped transistors; R1 = 10 kW, R2 = open

Features * 100 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：202.93 Kbytes 页数：12 Pages

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丝印：11；Package：SC-59；PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：224.95 Kbytes 页数：18 Pages

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丝印：11；Package：SC-70；PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：224.95 Kbytes 页数：18 Pages

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丝印：11；Package：SOT490；NPN resistor-equipped transistors R1 = 4.7 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit applications. DESCRIPTION NPN resistor-equipped transistor (see “S

文件：402.59 Kbytes 页数：15 Pages

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丝印：11；Package：SOT490；NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit applications.

文件：402.61 Kbytes 页数：15 Pages

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丝印：11；Package：SOT-490；NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：92.31 Kbytes 页数：14 Pages

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丝印：11；Package：SOT-490；NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：180.93 Kbytes 页数：14 Pages

恩XP

丝印：11；Package：DFN1006-2；Extremely low capacitance bidirectional ESD protection diode

1.1 General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The c

文件：909.03 Kbytes 页数：12 Pages

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丝印：11；Package：SOD882；Extremely low capacitance bidirectional ESD protection diode

1. General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 (DFN1006-2) Surface-Mounted Device (SMD) plastic package, designed to protect one signal line from the damage caused by ESD and other transients. The c

文件：229.39 Kbytes 页数：11 Pages

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丝印：11；Package：SOT1215；20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thi

文件：727.27 Kbytes 页数：15 Pages

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