10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

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UTC

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N-Channel 650 V (D-S) MOSFET

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VBSEMI

微碧半导体

10.5A, 400V   N-CHANNEL  POWER MOSFET

The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalan • High switching speed \n• RDS(ON)=0.65Ω @ VGS=10V \n• 100% avalanche tested;

UTC

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10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

文件：175.56 Kbytes 页数：4 Pages

UTC

友顺

10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

文件：175.56 Kbytes 页数：4 Pages

UTC

友顺

10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

文件：175.56 Kbytes 页数：4 Pages

UTC

友顺

10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

文件：175.56 Kbytes 页数：4 Pages

UTC

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10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Description\nThe HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode • 10A, 400V and 500V\n• TFALL: 1µs, 0.5µs\n• Fast Switching Speeds\n• Anti-Parallel DiodeApplications\n• Motor Drives\n• Protective Circuits;

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