25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

文件：142.69 Kbytes 页数：4 Pages

PANJIT

強茂

25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

文件：142.69 Kbytes 页数：4 Pages

PANJIT

強茂

SIPMOS PowerTransistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature

文件：146.3 Kbytes 页数：8 Pages

Infineon

英飞凌

ThinkPad Hard Disk Drive

Preface You can increase the storage capacity of your ThinkPad® computer by replacing the ThinkPad Hard Disk Drive with one of greater capacity. Your option package contains the following: • ThinkPad Hard Disk Drive • ThinkPad Hard Disk Drive User’s Guide If any of the items listed above are

文件：2.55947 Mbytes 页数：54 Pages

IBM

OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

文件：347.27 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS 2Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated

文件：281.87 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated

文件：276.86 Kbytes 页数：9 Pages

Infineon

英飞凌

N-Channel 30-V (D-S) MOSFET

文件：1.77212 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.73664 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.77236 Mbytes 页数：8 Pages

VBSEMI

微碧半导体