CoolMOSTM Power Transistor

文件：478.87 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：08N80C3；Package：PG-TO220FP；CoolMOSTM Power Transistor

文件：478.87 Kbytes 页数：10 Pages

INFINEON

英飞凌

CoolMOS™ Power Transistor

• New revolutionary high voltage technology\n• High peak current capability\n• Pb-free lead plating; RoHS compliant\n• Ultra low effective capacitances\n• Fully isolated package (2500 VAC; 1 minute);

Infineon

英飞凌

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：582.21 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：582.21 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：582.21 Kbytes 页数：4 Pages

CET-MOS

华瑞