| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CEP08N8 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. 文件：440.07 Kbytes 页数：4 Pages | CET 华瑞 | CET | |
CEP08N8 | N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：582.21 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS | |
CEP08N8 | N Channel MOSFET | CET 华瑞 | CET | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：582.21 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：582.21 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS |
技术参数
- BVDSS(V)：
800
- Rds(on)mΩ@10V：
1550
- ID(A)：
8
- Qg(nC)@10V(typ)：
39
- RθJC(℃/W)：
0.6
- Pd(W)：
208
- Configuration：
Single
- Polarity：
N
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
询价 | ||
CET/華瑞 |
23+ |
TO-TO-220 |
92299 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
CET/華瑞 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
询价 | ||
CET |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ON/安森美 |
23+ |
DPAK4LEA |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
CET/華瑞 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
CET |
23+ |
TO-220 |
4000 |
正品原装货价格低 |
询价 | ||
CET |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
CET |
25+ |
TO-220 |
1250 |
原装正品,假一罚十! |
询价 | ||
CAT |
24+ |
N/A |
8336 |
公司现货库存,支持实单 |
询价 |
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