SPA08N80C3

Isc N-Channel MOSFET Transistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

SPA08N80C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

SPA08N80C3

CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

SPA08N80C3

Marking：08N80C3；Package：PG-TO220FP；CoolMOSTM Power Transistor

SPA08N80C3_09

CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

SPA08N80C3_11

CoolMOSTM Power Transistor

SPI08N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances

SPI08N80C3

iscN-ChannelMOSFETTransistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

SPP08N80C3

CoolMOSTMPowerTransistor

SPP08N80C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.65Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice