Airfast RF Power GaN Transistor

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 2690 MHz. Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver •

文件：209.82 Kbytes 页数：13 Pages

恩XP

Airfast RF Power GaN Transistor

Features • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimized for massive MIMO active antenna systems for 5G base stations

文件：209.78 Kbytes 页数：13 Pages

恩XP

X7R Dielectric

文件：131.8 Kbytes 页数：4 Pages

AVX

General Specifications

文件：160.55 Kbytes 页数：5 Pages

AVX

Airfast RF Power LDMOS Transistor

文件：313.74 Kbytes 页数：13 Pages

恩XP

Standard MLCC (X7R Dielectric)

KYOCERA AVX

Package：0805（2012 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 陶瓷电容器 描述：CAP CER 1UF 50V X7R 0805

KYOCERA AVX

Package：0805（2012 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 陶瓷电容器 描述：CAP CER 1UF 50V X7R 0805

KYOCERA AVX