N-Channel 30-V (D-S) MOSFET

文件：1.63832 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.68909 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt ra

文件：275.93 Kbytes 页数：9 Pages

INFINEON

英飞凌

OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt ra

文件：275.93 Kbytes 页数：9 Pages

INFINEON

英飞凌

N-Channel 30-V (D-S) MOSFET

文件：1.63832 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

丝印：07N03LB；Package：PG-TO220-3-1；OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt ra

文件：275.93 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：07N03LA；Package：P-TO251-3-1；Power-Transistor

文件：242.43 Kbytes 页数：9 Pages

INFINEON

英飞凌