丝印：D2PAK；Package：TO-263；N-Channel 65 0V (D-S)Power MOSFET

文件：2.12307 Mbytes 页数：10 Pages

VBSEMI

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Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：159.83 Kbytes 页数：14 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：159.83 Kbytes 页数：14 Pages

Infineon

英飞凌

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10809 Mbytes 页数：10 Pages

VBSEMI

微碧半导体