Cool MOS Power Transistor

文件：980.68 Kbytes 页数：13 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：625.63 Kbytes 页数：15 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；N-Channel 65 0V (D-S)Power MOSFET

文件：2.12298 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.64 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

文件：339.45 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS complian

文件：374.19 Kbytes 页数：14 Pages

Infineon

英飞凌