ISPD07N60C3

Marking：DPAK；Package：TO-252；N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISPP07N60C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform

SPA07N60C3

N-Channel650V(D-S)PowerMOSFET

SPA07N60C3

IscN-ChannelMOSFETTransistor

SPA07N60C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated

SPA07N60C3

NewrevolutionaryhighvoltagetechnologyUltralowgatecharge

SPA07N60C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomplian

SPB07N60C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomplian

SPB07N60C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated

SPB07N60C3

N-Channel650V(D-S)PowerMOSFET