N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

文件：561.49 Kbytes 页数：5 Pages

Fuji

富士通

IGBT with integrated diode in packages offering space saving advantage

文件：1.92413 Mbytes 页数：16 Pages

Infineon

英飞凌

IGBT with integrated diode in packages offering space saving advantage

文件：1.74081 Mbytes 页数：16 Pages

Infineon

英飞凌

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

文件：227.22 Kbytes 页数：4 Pages

JIANGSU

长电科技