06N06L说明书PDF资料供应价格谷峰半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
06N06L	文件：668.54 Kbytes Page：6 Pages	丝印：06N06L；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：668.54 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
06N06LA	文件：891.51 Kbytes Page：6 Pages	丝印：06N06L；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET Description The 06N06LA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：891.51 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
06N06L	文件：300 bytes Page：1 Pages	60V N Channel TRENCH MOSFET	GOFORD 谷峰半导体	GOFORD
06N06LA	文件：300 bytes Page：1 Pages	MOSFET Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro	GOFORD 谷峰半导体	GOFORD

更多06N06L供应商更新时间2025-10-13 10:00:00