丝印：065N06T；Package：PDFN3x3-8L；MOSFET

Features - Super low gate charge. - Excellent Cdv/dt effect decline. - Advanced high cell density trench technology. - Green device available. - AEC-Q101 Qualified.

文件：509.87 Kbytes 页数：6 Pages

COMCHIP

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丝印：065N06LS；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, 60 V

文件：1.11577 Mbytes 页数：12 Pages

Infineon

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OptiMOS짰 Power-Transistor

文件：445.16 Kbytes 页数：10 Pages

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OptiMOS??Power-Transistor Features For fast switching converters and sync. rectification

文件：420.34 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS??Power-Transistor Features For fast switching converters and sync. rectification

文件：420.34 Kbytes 页数：10 Pages

Infineon

英飞凌