丝印：034N10LS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 100 V

Features • Optimized for high performance SMPS, e.g. sync. Rec. • 100 avalanche tested • Superior thermal resistance • N-channel, logic level • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.45168 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：034N15N6；Package：PG-HSOF-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.16534 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：034N15N6；Package：PG-HDSOP-16；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.2414 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：034R0NL5；Package：PDFN-8-5X6X0.95-1.27；100A, 30V N-CHANNEL MOSFET

DESCRIPTION SVT034R0NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This dev

文件：338.51 Kbytes 页数：9 Pages

SILAN

士兰微

丝印：034N06L；Package：PG-TSDSON-8FL；OptiMOSTM5 Power-Transistor, 60 V

文件：1.1982 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：0345；Package：VSON；3-V to 20-V Input Synchronous Buck Controller

文件：1.55064 Mbytes 页数：26 Pages

TI

德州仪器

丝印：0345；Package：VSON；3-V to 20-V Input Synchronous Buck Controller

文件：1.55064 Mbytes 页数：26 Pages

TI

德州仪器

连接器附件

Mill-Max

美信

压线端子胶壳

Molex

莫仕

压线端子胶壳

Molex

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