丝印：031N06T；Package：PDFN5x6-8L；MOSFET

Features - Ultra-low on-resistance and gate-charge. - Advanced shielded-gate technology. - AEC-Q101 Qualified.

文件：525.44 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：031N06T；Package：PDFN5x6-8L；MOSFET

Features - Ultra-low on-resistance and gate-charge. - Advanced shielded-gate technology.

文件：525.61 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：031N13N6；Package：PG-TO263-7；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • 100 avalanche tested • 175°C operating temperature • Optimized for motor drives and battery powered applications • Pb-free lead pla

文件：1.06411 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：0310；Package：PDFN-8-3.3x3.3x0.75-0.65；45A, 30V N-CHANNEL MOSFET

DESCRIPTION The SVT03100NL3 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This

文件：264.34 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：031N08SC；Package：PG-WSON-8；MOSFET OptiMOS™ 6 Power ‑Transistor, 80 V

文件：1.09878 Mbytes 页数：15 Pages

INFINEON

英飞凌

RF射频同轴连接器

ITT Cannon

RF射频同轴连接器

TE

泰科

RF射频同轴连接器

TE

泰科

包装：散装 类别：盒子，外壳，机架 箱 描述：BOX ABS ALMOND 4.380\

SERPAC

包装：袋 类别：盒子，外壳，机架 箱 描述：BOX ABS BLACK 4.380\

SERPAC